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纳米化学论坛第21讲:2017年6月29日14:00

报告人:段镶锋 教授 美国 加州大学洛杉矶分校

地点:化学与分子科学学院 教工之家

时间:2017年6月29日14:00

主要内容:
Two-dimensional materials such as graphene and MoS2 have attracted intense interest as alternative electronic materials in the post-silicon era. Despite intense interest and effort to date, it remains an open question whether 2DSC transistors can offer competitive performance matching up to exceeding that of the silicon devices. To achieve a high performance (high on-current) device requires a pristine channel with high carrier mobility, an optimized contact with low contact resistance and an ultrashort channel length. The simultaneous optimization of these device parameters is of considerable challenge for the atomically thin 2DSCs. Here I will review various strategies for optimizing these factors, and discuss how these strategies can be combined together to push the limit of 2D transistors. Additionally, I will also discuss a new design of 2D-material-based vertical transistors that can enable new device functions or unprecedented combination of device performance and flexibility and a series of tunable photonic devices. I will conclude with a brief summary of the current challenges and future opportunities in 2D electronics.

地址:湖北省武汉市武昌区珞珈山,武汉大学化学与分子科学学院,化北 118 & 化东 101/201

Tel:+86-27-68755687   Fax:+86-27-68755687   Email:leifu@whu.edu.cn

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